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Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique

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Abstract

The Kyropoulos technique allows growing large diameter Ti-doped sapphire for chirped pulse amplification (CPA) lasers. A scattering defect particular to Kyropoulos grown crystals is presented. This defect is characterized by different techniques: luminescence, absorption measurement, X-ray rocking curve, and transmission electron microscopy measurements. The impact of this defect on the potential application in CPA lasers is evaluated. The nature of this defect is discussed. Modified convexity of the interface is proposed to avoid the formation of this defect and increase the quality of the Ti-doped sapphire crystals.

Graphical abstract: Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique

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Publication details

The article was received on 20 Nov 2017, accepted on 04 Dec 2017 and first published on 04 Dec 2017


Article type: Paper
DOI: 10.1039/C7CE02004J
Citation: CrystEngComm, 2018, Advance Article
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    Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique

    G. Alombert-Goget, Y. Guyot, A. Nehari, O. Benamara, N. Blanchard, A. Brenier, N. Barthalay and K. Lebbou, CrystEngComm, 2018, Advance Article , DOI: 10.1039/C7CE02004J

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