Jump to main content
Jump to site search

Issue 45, 2018
Previous Article Next Article

Low temperature solution synthesis of silicon, germanium and Si–Ge axial heterostructures in nanorod and nanowire form

Author affiliations

Abstract

Herein, we report the formation of silicon, germanium and more complex Si–SixGe1−x and Si–Ge axial 1D heterostructures, at low temperatures in solution. These nanorods/nanowires are grown using phenylated compounds of silicon and germanium as reagents, with precursor decomposition achieved at substantially reduced temperatures (200 °C for single crystal nanostructures and 300 °C for heterostructures), through the addition of a reducing agent. This low energy route for the production of these functional nanostructures as a wet chemical in high yield is attractive to meet the processing needs for next generation photovoltaics, batteries and electronics.

Graphical abstract: Low temperature solution synthesis of silicon, germanium and Si–Ge axial heterostructures in nanorod and nanowire form

Back to tab navigation

Supplementary files

Publication details

The article was received on 17 Apr 2018, accepted on 11 May 2018 and first published on 15 May 2018


Article type: Communication
DOI: 10.1039/C8CC03075H
Citation: Chem. Commun., 2018,54, 5728-5731
  •   Request permissions

    Low temperature solution synthesis of silicon, germanium and Si–Ge axial heterostructures in nanorod and nanowire form

    G. Flynn, K. Stokes and K. M. Ryan, Chem. Commun., 2018, 54, 5728
    DOI: 10.1039/C8CC03075H

Search articles by author

Spotlight

Advertisements