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Metal-assisted exfoliation of few-layer black phosphorus with high yield

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Abstract

We introduce a metal-assisted exfoliation method to produce few-layer black phosphorus with the lateral size larger than 50 μm and the area 100 times larger than those exfoliated using the normal “scotch-tape” technique. Using a field effect transistor it was found the hole mobility is 68.6 cm2 V−1 s−1 and the current on/off ratio can reach about 2 × 105.

Graphical abstract: Metal-assisted exfoliation of few-layer black phosphorus with high yield

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Publication details

The article was received on 04 Nov 2017, accepted on 16 Nov 2017 and first published on 16 Nov 2017


Article type: Communication
DOI: 10.1039/C7CC08488A
Citation: Chem. Commun., 2018, Advance Article
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    Metal-assisted exfoliation of few-layer black phosphorus with high yield

    L. Guan, B. Xing, X. Niu, D. Wang, Y. Yu, S. Zhang, X. Yan, Y. Wang and J. Sha, Chem. Commun., 2018, Advance Article , DOI: 10.1039/C7CC08488A

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