Issue 12, 2018

Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection

Abstract

A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.

Graphical abstract: Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection

Article information

Article type
Paper
Submitted
06 Jan 2018
Accepted
31 Mar 2018
First published
09 Apr 2018

Analyst, 2018,143, 2784-2789

Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection

X. Ding, S. Yang, B. Miao, L. Gu, Z. Gu, J. Zhang, B. Wu, H. Wang, D. Wu and J. Li, Analyst, 2018, 143, 2784 DOI: 10.1039/C8AN00032H

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