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Growth, characterization and optoelectronic applications of pure-phase large-area CsPb2Br5 flake single crystals

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Abstract

To clarify the controversies on CsPb2Br5 and extend its optoelectronic applications, from a thermodynamic equilibrium growth system, pure phase high quality CsPb2Br5 single crystals (maximum area: 5 × 5 mm2, minimum thickness: 160 nm) were successfully obtained. Optical characterization results indicated a 3.87 eV bandgap for CsPb2Br5, clarifying the controversies on CsPb2Br5. The fabricated photodetector showed a sensitive and fast deep-UV photoresponse, demonstrating the potential applications of CsPb2Br5 in deep-UV detection. Theoretical calculations suggested that the wide bandgap of CsPb2Br5 resulted from its layered structure and short Pb–Br bonds.

Graphical abstract: Growth, characterization and optoelectronic applications of pure-phase large-area CsPb2Br5 flake single crystals

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Publication details

The article was received on 23 Oct 2017, accepted on 27 Nov 2017 and first published on 27 Nov 2017


Article type: Communication
DOI: 10.1039/C7TC04834C
Citation: J. Mater. Chem. C, 2018, Advance Article
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    Growth, characterization and optoelectronic applications of pure-phase large-area CsPb2Br5 flake single crystals

    Z. Zhang, Y. Zhu, W. Wang, W. Zheng, R. Lin and F. Huang, J. Mater. Chem. C, 2018, Advance Article , DOI: 10.1039/C7TC04834C

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