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Issue 48, 2017
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Enhanced UV-visible light photodetectors with a TiO2/Si heterojunction using band engineering

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Abstract

A simple hydrothermal process involving thermal diffusion has been developed to synthesize almost vertical doped titanium dioxide (TiO2) nanorod arrays on a silicon (Si) surface. The enhanced ultraviolet-visible (UV-vis) light photodetectors with a TiO2/Si heterojunction were fabricated using band engineering, by doping indium (In) or nitrogen (N) in TiO2 nanorod arrays. The photodiodes showed high quantum efficiencies of 200–400% under visible light illumination (e.g., 565 nm), and ∼16% with UV light (365 nm). Additionally, the N-doped TiO2/Si devices, with a unilateral linearly graded junction, had greater rectification characteristics, lower dark current, better quantum efficiency and response to UV detection, and the In-doped TiO2/Si heterojunction had a better multiplication factor for weak visible light detection, with a decreased electronic barrier and increased carrier concentration. These excellent results mean that doped TiO2/Si heterojunctions will be useful for new UV-vis light detection enhanced photodiodes which do not require expensive auxiliary equipment, thus making them easy to use in applications involving portable and wearable equipment.

Graphical abstract: Enhanced UV-visible light photodetectors with a TiO2/Si heterojunction using band engineering

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Publication details

The article was received on 21 Oct 2017, accepted on 21 Nov 2017 and first published on 22 Nov 2017


Article type: Paper
DOI: 10.1039/C7TC04811D
Citation: J. Mater. Chem. C, 2017,5, 12848-12856
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    Enhanced UV-visible light photodetectors with a TiO2/Si heterojunction using band engineering

    T. Ji, Q. Liu, R. Zou, Y. Zhang, L. Wang, L. Sang, M. Liao and J. Hu, J. Mater. Chem. C, 2017, 5, 12848
    DOI: 10.1039/C7TC04811D

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