Jump to main content
Jump to site search

Issue 2, 2018
Previous Article Next Article

High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

Author affiliations

Abstract

High-performances deep-ultraviolet (DUV) photodetectors (PDs) are highly desired due to their great importance in numerous fields. In this study, self-powered MoS2/GaN p–n heterojunction PDs were constructed, which exhibited high sensitivity to DUV light illumination and pronounced photovoltaic behaviours. Photoresponse analysis revealed a high responsivity of 187 mA W−1, a high specific detectivity of 2.34 × 1013 Jones, a high linear dynamic range of 97.3 dB and fast response speeds of 46.4/114.1 μs (5 kHz) under a DUV light of 265 nm at zero bias voltage without an external power supply. Moreover, the MoS2/GaN p–n heterojunction PD could operate with excellent stability and repeatability in a wide frequency range over 10 kHz. The high performance could be attributed to the enhancment by the built-in electric field in the heterojunction. It is expected that such high-performance self-powered DUV PDs will have great potential applications in the future.

Graphical abstract: High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

Back to tab navigation

Publication details

The article was received on 18 Oct 2017, accepted on 01 Dec 2017 and first published on 04 Dec 2017


Article type: Paper
DOI: 10.1039/C7TC04754A
Citation: J. Mater. Chem. C, 2018,6, 299-303
  •   Request permissions

    High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

    R. Zhuo, Y. Wang, D. Wu, Z. Lou, Z. Shi, T. Xu, J. Xu, Y. Tian and X. Li, J. Mater. Chem. C, 2018, 6, 299
    DOI: 10.1039/C7TC04754A

Search articles by author

Spotlight

Advertisements