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High-performances self-powered deep ultraviolet photodetector based on MoS2/GaN p-n heterojunction

Abstract

High-performances deep ultraviolet (DUV) photodetectors (PDs) are highly desired due to their great importance in numerous fields. In this work, self-powered MoS2∕GaN p-n heterojunction PDs were constructed, which exhibited high sensitivity to DUV light illumination and pronounced photovoltaic behaviors. Photoresponse analysis reveals that a high responsivity of 187 mA W-1, a high specific detectivity of 2.34×1013 Jones, a high linear dynamic range of 97.3 dB and fast response speeds of 46.4/114.1 μs (5 kHz) were achieved under a DUV light of 265 nm at zero bias voltage without external power supply. Moreover, the MoS2∕GaN p-n heterojunction PD could operate with excellent stability and repeatability in a wide frequency range over 10 kHz. The high performance could be attributed to the enhancing by the built-in electric field in heterojunction. It’s expected that such high-performance self-powered DUV PD will have great potential applications in the future.

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Publication details

The article was received on 18 Oct 2017, accepted on 01 Dec 2017 and first published on 04 Dec 2017


Article type: Paper
DOI: 10.1039/C7TC04754A
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
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    High-performances self-powered deep ultraviolet photodetector based on MoS2/GaN p-n heterojunction

    R. Zhuo, Y. Wang, D. Wu, Z. Lou, Z. Shi, T. Xu, J. Xu, Y. Tian and X. Li, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC04754A

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