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All-sputtered oxide thin-film transistors fabricated at 150 °C using simultaneous ultraviolet and thermal treatment

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Abstract

In this study, we report all-sputtered In–Ga–Zn–O (IGZO) thin-film transistors (TFTs) through the fabrication of a sputtered gate insulator. Furthermore, using simultaneous UV and thermal (SUT) treatment, we fabricate sputter-processed gate insulators at a low temperature of 150 °C with a higher amount of coordinated oxygen species and a higher surface energy than thermal-only (300 °C) treated gate insulators. Additionally, by activating the IGZO channel layer using SUT treatments, we fabricate all-sputter processed IGZO TFTs at 150 °C and they exhibit improved device performances compared to thermal-only treated ones; the field-effect mobility is increased from 7.32 ± 3.8 to 29.59 ± 2.5 cm2 V−1 s−1, the on/off ratio is increased from (1.1 ± 1.8) × 105 to (2.9 ± 1.7) × 108, and the subthreshold swing is decreased from 1.0 ± 0.07 to 0.4 ± 0.05 V dec−1.

Graphical abstract: All-sputtered oxide thin-film transistors fabricated at 150 °C using simultaneous ultraviolet and thermal treatment

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Publication details

The article was received on 11 Oct 2017, accepted on 04 Dec 2017 and first published on 05 Dec 2017


Article type: Paper
DOI: 10.1039/C7TC04642A
Citation: J. Mater. Chem. C, 2018, Advance Article
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    All-sputtered oxide thin-film transistors fabricated at 150 °C using simultaneous ultraviolet and thermal treatment

    Y. J. Tak, S. J. Kim, S. Kwon, H. J. Kim, K. Chung and H. J. Kim, J. Mater. Chem. C, 2018, Advance Article , DOI: 10.1039/C7TC04642A

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