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Direct fabrication of BiFeO3 thin films on polyimide substrates for flexible electronics

Abstract

One of the major challenges for the integration of functional oxides as ferroelectrics into flexible electronics is the reduction of their processing temperature below the degradation of plastic substrates. Under this aim particular attention has been given to the low-temperature processing of oxide films by chemical solution deposition methods. In this work, lead-free multifunctional and multiferroic BiFeO3 thin films have been fabricated for the first time at a temperature as low as 300 °C, directly on flexible polyimide substrates by our own proprietary solution-based Seeded Photosensitive Precursor Method. Despite this exceptionally low thermal budget a remanent polarization, Pr, of 2.8 µC/cm2 is obtained for these BiFeO3 films, with a coercive field, Ec, of 380 kV/cm. In addition, and of significant relevance the films exhibit a room temperature ferromagnetic response, showing for the first time the multiferroic behaviour at room temperature of BFO films prepared at 300 °C. The ferroelectric, piezoelectric and ferromagnetic functionalities demonstrated for these films reveal their interest for applications in microelectronic devices as well as their feasibility for being used in flexible electronics. The results here shown are a proof of concept of the Seeded Photosensitive Precursor Method for the successful integration of lead-free ferroelectric thin films with flexible plastic substrates and have a broad impact in terms of an extended use of functional oxide thin films processed with low thermal schedules.

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Publication details

The article was received on 07 Oct 2017, accepted on 13 Nov 2017 and first published on 14 Nov 2017


Article type: Paper
DOI: 10.1039/C7TC04571A
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
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    Direct fabrication of BiFeO3 thin films on polyimide substrates for flexible electronics

    M. Tomczk, I. Bretos, R. Jiménez, A. Mahajan, V. Ramana, M. L. CALZADA and P. M. Vilarinho, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC04571A

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