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A Self-powered Broadband Photodetector Based on n-Si(111)/p-NiO Heterojunction with High Photosensitivity and Enhanced External Quantum Efficiency

Abstract

A self-powered high-performance broadband photodetectors was fabricated based on n-Si(111)/p-NiO heterojunctions consisted of single-crystal NiO nanosheets via a facile hydrothermal method. The device exhibited broadband detection capability (350 nm - 600 nm) and excellent self-powered performance, external quantum efficiency (EQE) as high as ~ 20% at zero bias. Under a low reverse bias of -0.2 V, the highest photosensitivity (photo-dark current ratio) of 938% and 2,249% was achieved under illumination of 350 nm and 600 nm light (0.5 mW cm-2), respectively, which was several orders of magnitude higher than the reported Si/NiO heterojunction photodetectors. Under a high reverse bias of -2 V, the excellent EQE of the device was found to be 62.5% - 89.5% upon 350 - 600 nm light illuminations. In addition, the fast response speed of the as-fabricated device was less than 30 ms. The results indicate that the n-Si(111)/p-NiO heterojunction photodetectors made of single-crystal NiO nanosheets have an obvious advantage for its applications in high-performance and energy-saving optoelectronic devices.

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Publication details

The article was received on 07 Oct 2017, accepted on 11 Nov 2017 and first published on 13 Nov 2017


Article type: Paper
DOI: 10.1039/C7TC04565D
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
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    A Self-powered Broadband Photodetector Based on n-Si(111)/p-NiO Heterojunction with High Photosensitivity and Enhanced External Quantum Efficiency

    Y. Zhang, T. Ji, W. Zhang, G. Guan, Q. Ren, K. Xu, X. Huang, R. Zou and J. Hu, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC04565D

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