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Issue 47, 2017
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A self-powered broadband photodetector based on an n-Si(111)/p-NiO heterojunction with high photosensitivity and enhanced external quantum efficiency

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Abstract

A self-powered high-performance broadband photodetector was fabricated, based on n-Si(111)/p-NiO heterojunctions consisting of single-crystal NiO nanosheets, via a facile hydrothermal method. The device exhibited broadband detection capabilities (350–600 nm) and excellent self-powered performance, with an external quantum efficiency (EQE) as high as ∼20% under zero bias. Under a low reverse bias of −0.2 V, the highest photosensitivity (photo-dark current ratio) values of 938% and 2249% were achieved under illumination from 350 nm and 600 nm light (0.5 mW cm−2), respectively, which was several orders of magnitude higher than for previously reported Si/NiO heterojunction photodetectors. Under a high reverse bias of −2 V, the excellent EQE of the device was found to be between 62.5% and 89.5% upon illumination from 350–600 nm light. In addition, the fast response speed of the as-fabricated device was less than 30 ms. The results indicate that n-Si(111)/p-NiO heterojunction photodetectors made of single-crystal NiO nanosheets have obvious advantages for application in high-performance and energy-saving optoelectronic devices.

Graphical abstract: A self-powered broadband photodetector based on an n-Si(111)/p-NiO heterojunction with high photosensitivity and enhanced external quantum efficiency

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Publication details

The article was received on 07 Oct 2017, accepted on 11 Nov 2017 and first published on 13 Nov 2017


Article type: Paper
DOI: 10.1039/C7TC04565D
Citation: J. Mater. Chem. C, 2017,5, 12520-12528
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    A self-powered broadband photodetector based on an n-Si(111)/p-NiO heterojunction with high photosensitivity and enhanced external quantum efficiency

    Y. Zhang, T. Ji, W. Zhang, G. Guan, Q. Ren, K. Xu, X. Huang, R. Zou and J. Hu, J. Mater. Chem. C, 2017, 5, 12520
    DOI: 10.1039/C7TC04565D

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