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High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates

Abstract

High-quality GaN-based light-emitting diode (LED) wafers have been grown on Si substrates by metal-organic chemical vapor deposition by designing the epitaxial structures with the AlN/Al0.24Ga0.76N buffer layers and the three-dimensional (3D) GaN layer. The AlN/Al0.24Ga0.76N buffer layers are directly grown on Si substrates to provide the large compressive stress to balance the tensile stress introduced during the cooling process; and the 3D GaN layer is grown on Al0.24Ga0.76N buffer layer to reduce the dislocation density of GaN epitaxial films. The as-grown GaN-based LED wafers exhibit very high-quality with the full-width at half-maximums for GaN(0002) and GaN(10-12) of 300 and 345 arcsec, respectively, and the internal quantum efficiency of ~80.1%. Afterwards, the LED wafers are fabricated into vertical-structure LED chips with the size of 1 × 1 mm2 by standard process. The as-prepared vertical-structure LED chips reveal the light output power of 569 mW with the forward voltage and the wall-plug efficiency of 2.82 V and 57.6%, respectively, at the current of 350 mA. These high-efficiency vertical-structure LED chips are expected to find wide applications in solid-state lighting fields.

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Publication details

The article was received on 30 Sep 2017, accepted on 23 Dec 2017 and first published on 27 Dec 2017


Article type: Paper
DOI: 10.1039/C7TC04478J
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
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    High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates

    W. Wang, Y. Lin, Y. Li, X. Li, L. Huang, Y. Zheng, Z. Lin, H. Wang and G. Li, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC04478J

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