Jump to main content
Jump to site search


Sb-Doped ZnO microwires: emitting filament and homojunction light-emitting diodes

Author affiliations

Abstract

Individual Sb-doped ZnO (ZnO:Sb) microwires with durable and reproducible p-type conduction have been synthesized, and by increasing the Sb2O3 weight ratios in the precursor mixtures, tunable p-type conduction characteristics can be obtained. Meanwhile, wavelength-tuning electroluminescence (EL) has been observed by applying bias onto individual ZnO:Sb microwires, in which the ZnO:Sb microwires act as emitting filaments. The as-synthesized p-type ZnO:Sb microwires are applied to fabricate homojunction light-emitting devices. The corresponding p–n junction demonstrates excellent diode characteristics, and strong near band edge emissions can be observed with the dominant EL emission wavelengths centered at 400 nm. The results demonstrated the emitting filament characteristics of ZnO:Sb microwires for the first time, and also demonstrated their applicability in homojunction light-emitting diodes, and thus may offer alluring prospects as compact, efficient, reliable building blocks for microscale light sources.

Graphical abstract: Sb-Doped ZnO microwires: emitting filament and homojunction light-emitting diodes

Back to tab navigation

Supplementary files

Publication details

The article was received on 30 Aug 2017, accepted on 15 Sep 2017 and first published on 20 Sep 2017


Article type: Paper
DOI: 10.1039/C7TC03956E
Citation: J. Mater. Chem. C, 2017, Advance Article
  •   Request permissions

    Sb-Doped ZnO microwires: emitting filament and homojunction light-emitting diodes

    G. He, M. Jiang, B. Li, Z. Zhang, H. Zhao, C. Shan and D. Shen, J. Mater. Chem. C, 2017, Advance Article , DOI: 10.1039/C7TC03956E

Search articles by author

Spotlight

Advertisements