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Issue 45, 2017
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Cu-Doped nickel oxide prepared using a low-temperature combustion method as a hole-injection layer for high-performance OLEDs

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Abstract

Solution-processed Cu doped nickel oxide (Cu-NiOx) is used as a hole injection layer (HIL) in phosphorescent green organic light-emitting diodes (OLEDs). Hole injection materials are very important for achieving high performance OLEDs. Herein, solution-processed Cu doped NiOx prepared using a combustion method is demonstrated as the HIL in OLEDs. Nickel oxide (NiOx) thin films incorporated with p-type Cu dopants resulted in a significantly improved conductivity and hole-injection capability. The UV-ozone treated NiOx shows significantly better hole injection than that without being treated by UV-ozone. Our results show that phosphorescent green OLEDs with UV-ozone treated Cu:NiOx show a maximum current efficiency of 85.3 cd A−1, which is remarkably higher than the conventional device based on poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) which has a maximum current efficiency of 68.3 cd A−1.

Graphical abstract: Cu-Doped nickel oxide prepared using a low-temperature combustion method as a hole-injection layer for high-performance OLEDs

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Publication details

The article was received on 25 Aug 2017, accepted on 26 Oct 2017 and first published on 27 Oct 2017


Article type: Paper
DOI: 10.1039/C7TC03884D
Citation: J. Mater. Chem. C, 2017,5, 11751-11757
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    Cu-Doped nickel oxide prepared using a low-temperature combustion method as a hole-injection layer for high-performance OLEDs

    Y. Li, X. Lu, R. Wang, Y. Ma, S. Duhm and M. Fung, J. Mater. Chem. C, 2017, 5, 11751
    DOI: 10.1039/C7TC03884D

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