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Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector

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Abstract

A self-powered ultraviolet photodetector was constructed with GaN/Ga2O3 p–n junction by depositing n-type Ga2O3 thin film on Al2O3 single crystals substrate covered by p-type GaN thin film. The fabricated device exhibits a typical rectification behavior in dark and excellent photovoltaic characteristics under 365 nm and 254 nm light illumination. The device shows an extremely high responsivity of 54.43 mA W−1, a fast decay time of 0.08 s, a high Ilight/Idark ratio of 152 and a high detectivity of 1.23 × 1011 cm Hz1/2 W−1 under 365 nm light with a light intensity of 1.7 mW cm−2 under zero bias. Such excellent performances under zero bias are attributed to the rapid separation of photogenerated electron–hole pairs driven by built-in electric field in the interface depletion region of GaN/Ga2O3 p–n junction. The results strongly suggest that the GaN/Ga2O3 p–n junction based photodetectors are suitable for applications in secure ultraviolet communication and space detection which require high responsivity and self-sufficient functionality.

Graphical abstract: Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector

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Publication details

The article was received on 17 Aug 2017, accepted on 20 Sep 2017 and first published on 20 Sep 2017


Article type: Paper
DOI: 10.1039/C7TC03746E
Citation: J. Mater. Chem. C, 2017, Advance Article
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    Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector

    P. Li, H. Shi, K. Chen, D. Guo, W. Cui, Y. Zhi, S. Wang, Z. Wu, Z. Chen and W. Tang, J. Mater. Chem. C, 2017, Advance Article , DOI: 10.1039/C7TC03746E

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