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Issue 40, 2017
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MoO3-induced oxidation doping of PEDOT:PSS for high performance full-solution-processed inverted quantum-dot light emitting diodes

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Abstract

Full-solution processed inverted quantum dot light-emitting diodes (QD-LEDs) are promising candidates for application in next generation active matrix displays, due to their low-cost solution fabrication processes and easy integration with n-type thin-film transistor backplanes. In this work, we report high performance transparent inverted QD-LEDs using a full-solution processable hybrid composite anode, formulated using poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), solution-processed molybdenum trioxide (s-MoO3), and silver nanowires. The effect of the aqueous s-MoO3 additive in the PEDOT:PSS anode on efficient operation of the QD-LEDs was systematically investigated. Our results show that the s-MoO3 additive not only enhances the wettability of the PEDOT:PSS surface, but also improves the conductivity of the PEDOT:PSS layer, leading to an ohmic contact between the composite anode and the hole transporting layer for efficient hole injection. With an optimal s-MoO3 addition in the PEDOT:PSS anode, the full-solution processable inverted QD-LEDs with a maximum current efficiency of 1.39 cd A−1 and a visible light transparency of over 70% were demonstrated. The composite transparent anode enables a 27% increase in current efficiency of the full-solution processable QD-LEDs compared to that of the structurally identical control device without the s-MoO3 additive. The encouraging results suggest that our investigation paves the way for the development of efficient vacuum-free transparent inverted QD-LEDs.

Graphical abstract: MoO3-induced oxidation doping of PEDOT:PSS for high performance full-solution-processed inverted quantum-dot light emitting diodes

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Publication details

The article was received on 15 Aug 2017, accepted on 15 Sep 2017 and first published on 18 Sep 2017


Article type: Paper
DOI: 10.1039/C7TC03700G
Citation: J. Mater. Chem. C, 2017,5, 10555-10561
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    MoO3-induced oxidation doping of PEDOT:PSS for high performance full-solution-processed inverted quantum-dot light emitting diodes

    M. Lee, L. Chen, N. Li and F. Zhu, J. Mater. Chem. C, 2017, 5, 10555
    DOI: 10.1039/C7TC03700G

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