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Substrate orientation-induced epitaxial growth of face centered cubic Mo2C superconductive thin film

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Abstract

In this study, we demonstrate the crystal structure-controlled growth of superconductive Mo2C thin films on a sapphire(0001) substrate in the pulsed-laser deposition. Detailed characterizations indicate that the thin film grown at 700 °C adopts the face centered cubic structure with the preferred orientation of the 〈111〉 direction. It was also demonstrated that the sapphire substrate and face centered cubic structured Mo2C thin film have the orientation relationship of {0006}sapphire//{111}Mo2C and [01[1 with combining macron]0]sapphire//[1[1 with combining macron]0] Mo2C due to a small in-plane lattice mismatch between their corresponding lattice spacing perpendicular to the {111} atomic plane of the Mo2C thin film. Electrical transport measurements show that the Mo2C thin films exhibit superconducting characteristics. This study provides a practical approach to controlling the crystal structure of superconductive Mo2C thin films through the optimization of substrate orientation.

Graphical abstract: Substrate orientation-induced epitaxial growth of face centered cubic Mo2C superconductive thin film

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Publication details

The article was received on 12 Aug 2017, accepted on 25 Sep 2017 and first published on 26 Sep 2017


Article type: Paper
DOI: 10.1039/C7TC03652C
Citation: J. Mater. Chem. C, 2017, Advance Article
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    Substrate orientation-induced epitaxial growth of face centered cubic Mo2C superconductive thin film

    Z. Zhang, F. Zhang, H. Wang, C. Ho Chan, W. Lu and J. Dai, J. Mater. Chem. C, 2017, Advance Article , DOI: 10.1039/C7TC03652C

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