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Issue 44, 2017
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Sensitized monolayer MoS2 phototransistors with ultrahigh responsivity

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Abstract

Monolayer MoS2 photodetectors have been extensively investigated; however, their responsivity and sensitivity are highly limited due to the monolayer thin profile. Herein, we proposed a sensitized-MoS2 photodetector consisting of a monolayer MoS2 transport channel sensitizing with few-layer MoS2 on top; this photodetector exhibited a very high responsivity of ∼104 A W−1 (at negative Vg) and ∼105–106 A W−1 (at zero and positive Vg) due to improved photon absorption and enhanced mobility, more than one order of magnitude higher than that of the pure monolayer MoS2. Moreover, the sensitivity D* as high as ∼1013 Jones was achieved by operating our sensitized device in the depletion mode, where there was very low noise. This device design and the simple approach proposed herein can open up new ways towards high-performance 2D material-based photodetectors.

Graphical abstract: Sensitized monolayer MoS2 phototransistors with ultrahigh responsivity

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Publication details

The article was received on 02 Aug 2017, accepted on 18 Oct 2017 and first published on 19 Oct 2017


Article type: Paper
DOI: 10.1039/C7TC03476H
Citation: J. Mater. Chem. C, 2017,5, 11614-11619
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    Sensitized monolayer MoS2 phototransistors with ultrahigh responsivity

    Y. Yang, N. Huo and J. Li, J. Mater. Chem. C, 2017, 5, 11614
    DOI: 10.1039/C7TC03476H

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