Jump to main content
Jump to site search


Ta-Doped SnO2 as a reduction–resistant oxide electrode for DRAM capacitors

Author affiliations

Abstract

Noble metal oxides, such as RuO2, have received attention as capacitor electrodes in dynamic random access memories (DRAMs). Noble metal oxides generally have a high work function compared to noble metals and enhance the crystallinity of dielectric materials grown on them, resulting in a lower leakage current and higher dielectric constants. Despite these advantages, noble metal oxides are easily reduced during the dielectric film, such as TiO2, growth on top or by annealing under a forming gas atmosphere, degrading the capacitor performance. In this work, Ta-doped SnO2 is suggested as a potential capacitor electrode for DRAMs. Ta-Doped SnO2 films have a high work function, comparable to that of RuO2, and induce the formation of a high-temperature phase with a high dielectric constant, namely rutile TiO2, at low temperatures. More importantly, the Ta-doped SnO2 films show suitable structural and chemical stabilities, even after annealing at 400 °C under a forming gas atmosphere. RuO2 films, on the other hand, turn into a mixture of RuO2 and Ru after annealing under the same conditions. These findings suggest that Ta-doped SnO2 could serve as capacitor electrodes in next-generation DRAMs.

Graphical abstract: Ta-Doped SnO2 as a reduction–resistant oxide electrode for DRAM capacitors

Back to tab navigation

Publication details

The article was received on 02 Aug 2017, accepted on 22 Aug 2017 and first published on 22 Aug 2017


Article type: Paper
DOI: 10.1039/C7TC03467A
Citation: J. Mater. Chem. C, 2017, Advance Article
  •   Request permissions

    Ta-Doped SnO2 as a reduction–resistant oxide electrode for DRAM capacitors

    C. J. Cho, M. Noh, W. C. Lee, C. H. An, C. Kang, C. S. Hwang and S. K. Kim, J. Mater. Chem. C, 2017, Advance Article , DOI: 10.1039/C7TC03467A

Search articles by author

Spotlight

Advertisements