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Highly improved performance in Zr0.5Hf0.5O2 films inserted by graphene oxide quantum dots layer for resistive switching nonvolatile memory

Abstract

Resistive memory (RRAM) based on a solid-electrolyte insulator is one kind of critical nanoscale device due to promising potentials in nonvolatile memory, analog circuits, and neuromorphic synapse applications. However, the random nature of the nucleation and growth of the conductive filaments (CFs) causes instability of switching parameter, which is a major obstacle for RRAM performance improvement. Here, we report a novel approach to resolve this challenge by inserting graphene oxide quantum dots (GOQDs) in oxides Zr0.5Hf0.5O2 (ZHO) films. The Ag/ZHO/GOQDs/ZHO/Pt stacked device exhibits reversible bipolar resistive switching (RS) behavior under dc sweeping voltage. The characteristics of the device with GOQDs exhibit better performance than that of the device without GOQDs, such as reduced threshold voltage, uniform distribution of set and reset voltage, robust retention, fast switching speed and low switching power. The underlying RS mechanism of RRAM is ascribed to be the formation and rupture of nanoscale CFs inside the solid-electrolyte oxide layer. The GOQDs could guide CF nucleation and growth direction to provide superior uniformity of RS properties and shorten the effective distance of the Ag+ motion through enhancing the local electric field on the GOQD sites. The overall device performance of the GOQDs-inserted memristor has the potential to open up a new way to improve the reliability of oxides-based RRAM, which could significantly accelerate their existing applications.

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Publication details

The article was received on 08 Jul 2017, accepted on 03 Oct 2017 and first published on 04 Oct 2017


Article type: Paper
DOI: 10.1039/C7TC03037A
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
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    Highly improved performance in Zr0.5Hf0.5O2 films inserted by graphene oxide quantum dots layer for resistive switching nonvolatile memory

    X. Yan, L. Zhang, Y. Yang, Z. Zhou, J. Zhao, Y. Zhang, Q. Liu and J. Chen, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC03037A

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