Resistive switching in MoSe2/BaTiO3 hybrid structures

Abstract

Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO₃ (BTO) and few-layer MoSe₂ are combined in a single structure. The C–V loops reveal the ferroelectric nature of both Al/Si/SiO_x/BTO/Au and Al/Si/SiO_x/MoSe₂/BTO/Au structures and the high quality of the SiO_x/MoSe₂ interface in the Al/Si/SiO_x/MoSe₂/Au structure. Al/Si/SiO_x/MoSe₂/BTO/Au hybrid structures show electroforming free resistive switching that is explained on the basis of the modulation of the potential distribution at the MoSe₂/BTO interface via ferroelectric polarization flipping. This structure shows promising resistive switching characteristics with a switching ratio of ≈10² and a stable memory window, which are highly required for memory applications.