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Issue 43, 2017
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Tailoring photoelectrochemical properties of semiconducting transition metal dichalcogenide nanolayers with porphyrin functionalization

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Abstract

We report a facile interfacial engineering method that can drastically modulate the photoelectrochemical properties of two-dimensional transition metal dichalcogenide (TMD) semiconductors. We find that the adsorption of Zn-centred protoporphyrins strongly influences the photocurrent, depending on the relative energy levels of the TMDs against those of the chromophore molecules.

Graphical abstract: Tailoring photoelectrochemical properties of semiconducting transition metal dichalcogenide nanolayers with porphyrin functionalization

  • This article is part of the themed collection: 2D Materials
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Publication details

The article was received on 27 Jun 2017, accepted on 08 Sep 2017 and first published on 08 Sep 2017


Article type: Communication
DOI: 10.1039/C7TC02861J
Citation: J. Mater. Chem. C, 2017,5, 11233-11238
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    Tailoring photoelectrochemical properties of semiconducting transition metal dichalcogenide nanolayers with porphyrin functionalization

    H. Zhang, J. Ji, A. A. Gonzalez and J. H. Choi, J. Mater. Chem. C, 2017, 5, 11233
    DOI: 10.1039/C7TC02861J

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