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Tailoring photoelectrochemical properties of semiconducting transition metal dichalcogenide nanolayers with porphyrin functionalization

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Abstract

We report a facile interfacial engineering method that can drastically modulate the photoelectrochemical properties of two-dimensional transition metal dichalcogenide (TMD) semiconductors. We find that the adsorption of Zn-centred protoporphyrins strongly influences the photocurrent, depending on the relative energy levels of the TMDs against those of the chromophore molecules.

Graphical abstract: Tailoring photoelectrochemical properties of semiconducting transition metal dichalcogenide nanolayers with porphyrin functionalization

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Publication details

The article was received on 27 Jun 2017, accepted on 08 Sep 2017 and first published on 08 Sep 2017


Article type: Communication
DOI: 10.1039/C7TC02861J
Citation: J. Mater. Chem. C, 2017, Advance Article
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    Tailoring photoelectrochemical properties of semiconducting transition metal dichalcogenide nanolayers with porphyrin functionalization

    H. Zhang, J. Ji, A. A. Gonzalez and J. H. Choi, J. Mater. Chem. C, 2017, Advance Article , DOI: 10.1039/C7TC02861J

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