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Issue 45, 2017
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Facile growth of density- and diameter-controlled GaN nanobridges and their photodetector application

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Abstract

The growth of arrayed GaN nanobridges (NBs) and their application in a photodetector (PD) were studied. First, GaN nanowires (NWs) were selectively grown on the sidewalls of a GaN mesa using an Au catalyst-assisted vapor–liquid–solid (VLS) method, while their density was conveniently controlled by varying the dilution of the Au nanoparticle colloidal solution. It was revealed that an m-axis NW was preferentially fabricated on both the m-plane and a-plane sidewalls. A two-step VLS–VS growth technique was utilized for the radial core–shell structure composed of GaN, InGaN and InGaN/GaN multi-quantum wells (MQWs) that allowed independent control of the NW diameter. Finally, core–shell NBs were fabricated across a trench formed between two GaN mesas to be used as a light absorbing medium in a photoconductor. Their optical response was measured at various wavelengths and InGaN/GaN MQWs embedded in the core–shell structure exhibited an enhanced photoresponse to visible light.

Graphical abstract: Facile growth of density- and diameter-controlled GaN nanobridges and their photodetector application

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Publication details

The article was received on 13 Jun 2017, accepted on 29 Oct 2017 and first published on 30 Oct 2017


Article type: Paper
DOI: 10.1039/C7TC02619F
Citation: J. Mater. Chem. C, 2017,5, 11879-11884
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    Facile growth of density- and diameter-controlled GaN nanobridges and their photodetector application

    J. Kang, M. A. Johar, B. Alshehri, E. Dogheche and S. Ryu, J. Mater. Chem. C, 2017, 5, 11879
    DOI: 10.1039/C7TC02619F

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