Jump to main content
Jump to site search


Performance improvement of a ZnMgO ultraviolet detector by chemical treatment with hydrogen peroxide

Author affiliations

Abstract

Herein, ZnMgO thin film ultraviolet (UV) photodetectors based on metal–semiconductor–metal structure were fabricated on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The effect of H2O2 solution treatment on the properties of the ZnMgO thin film and its UV photodetectors was investigated. After immersing the ZnMgO UV photodetector in a H2O2 solution at 100 °C for 3 min, the dark current of the device was reduced by more than one order of magnitude under 1 V bias, whereas the responsivity was slightly decreased. More interestingly, the response speed became much quicker and insensitive to the atmosphere after the treatment of the photodetector with H2O2 solution, which can be attributed to the reduction in the oxygen vacancy defects. Our findings may provide a promising approach for improving the performance of photodetectors.

Graphical abstract: Performance improvement of a ZnMgO ultraviolet detector by chemical treatment with hydrogen peroxide

Back to tab navigation

Publication details

The article was received on 02 Jun 2017, accepted on 04 Jul 2017 and first published on 13 Jul 2017


Article type: Paper
DOI: 10.1039/C7TC02425H
Citation: J. Mater. Chem. C, 2017, Advance Article
  •   Request permissions

    Performance improvement of a ZnMgO ultraviolet detector by chemical treatment with hydrogen peroxide

    Y. Zhu, K. Liu, X. Wang, J. Yang, X. Chen, X. Xie, B. Li and D. Shen, J. Mater. Chem. C, 2017, Advance Article , DOI: 10.1039/C7TC02425H

Search articles by author

Spotlight

Advertisements