Jump to main content
Jump to site search


n-Doping-Induced Efficient Electron-Injection for High Efficiency Inverted Organic Light-Emitting Diodes Based on Thermally Activated Delayed Fluorescence Emitter

Abstract

High-performance inverted organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) emitters are achieved by using solution-processing n-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) film with cesium carbonate (Cs2CO3) as the buffer layer between ZnO and BPhen layer. The n-doped BPhen interlayer shows higher electron-transporting properties than undoped BPhen film and reduce the electron-injection barrier from ZnO to BPhen layer. The inverted OLEDs based on TXO-PhCz emitter incorporating the solution-processed Cs2CO3-doped BPhen film as an interlayer show a maximum external quantum efficiency of 16.4%, current efficiency of 53.9 cd/A, and power efficiency of 35.6 lm/W, which realize unprecedentedly high-efficiency TADF-based inverted OLEDs. These results are competitive with the properties of inverted OLEDs based on phosphorescent emitters, implying that TADF emitters have potential to substitute for phosphors on realizing air-stable and large-area displays.

Back to tab navigation

Supplementary files

Publication details

The article was received on 01 Jun 2017, accepted on 12 Jul 2017 and first published on 14 Jul 2017


Article type: Paper
DOI: 10.1039/C7TC02406A
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
  •   Request permissions

    n-Doping-Induced Efficient Electron-Injection for High Efficiency Inverted Organic Light-Emitting Diodes Based on Thermally Activated Delayed Fluorescence Emitter

    Y. Chen, X. Wei, Z. Li, Y. Liu, J. Liu, R. Wang, P. Wang, Y. Yamada-Takamura and Y. Wang, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC02406A

Search articles by author

Spotlight

Advertisements