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Partially planar BP3 with high electron mobility as a phosphorene analog

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Abstract

Based on first-principles calculations, we propose a two-dimensional α BP3 crystal in which one quarter of the phosphorus atoms in phosphorene are substituted by boron atoms. Its geometrical structure resembles that of graphene more than that of phosphorene, although phosphorus is present as a major component. It is dynamically stable and energetically much more stable than another allotrope analogous to blue (β) phosphorene. The α BP3 monolayer is a semiconductor with an indirect band gap (=0.77 eV) within the HSE06 calculation. For the BP3 bilayer, three stacking patterns are equally stable within 3 meV per atom. The monolayer exhibits a high electron mobility (∼4.6 × 104 cm2 V−1 s−1) along the zigzag direction. In the bilayer, the mobility is ∼200 times higher than that of the α phosphorene bilayer. Specifically, it is even higher (∼3.7 × 105 cm2 V−1 s−1) and amounts to ∼2500 times in one of the patterns. Therefore, the BP3 monolayer or bilayer will be useful as an n-type material in nanoelectronics through appropriate doping.

Graphical abstract: Partially planar BP3 with high electron mobility as a phosphorene analog

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Publication details

The article was received on 29 May 2017, accepted on 07 Jul 2017 and first published on 10 Jul 2017


Article type: Paper
DOI: 10.1039/C7TC02346D
Citation: J. Mater. Chem. C, 2017, Advance Article
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    Partially planar BP3 with high electron mobility as a phosphorene analog

    F. Shojaei and H. S. Kang, J. Mater. Chem. C, 2017, Advance Article , DOI: 10.1039/C7TC02346D

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