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Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

Abstract

Free-standing single crystalline semiconductor membranes have gained intensive attention over the last few years due to their versatile usage in many applications. This material platform possesses a high level of material quality similar to their bulk counterparts because single crystallinity maintains. Si, Ge, and III-V based membranes have been widely studied for flexible electronic and optoelectronic devices such as thin-film transistors and photodetectors. However, the current status of research and development on free-standing single crystalline wide band-gap membranes is relatively early compared to IV and III-V based membranes. This review highlights the recent advances in free-standing wide band-gap membranes, including GaN, SiC, ZnO, β-Ga2O3, and diamond and their applications. Fabrication techniques of each membrane are presented with material characterizations. Some prospects on new research opportunities and challenges are also discussed.

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Publication details

The article was accepted on 12 Jun 2017 and first published on 15 Jun 2017


Article type: Review Article
DOI: 10.1039/C7TC02221B
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
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    Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

    M. Kim, J. Seo, U. Singisetti and Z. Ma, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC02221B

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