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Issue 33, 2017
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Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

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Abstract

Free-standing single crystalline semiconductor membranes have gained intensive attention over the last few years due to their versatile usage in many applications. This material platform possesses a high level of material quality similar to their bulk counterparts because single crystallinity is maintained. Si, Ge, and III–V based membranes have been widely studied for flexible electronic and optoelectronic devices such as thin-film transistors and photodetectors. However, the current status of research and development on free-standing single crystalline wide band-gap membranes is at a relatively early stage compared to IV and III–V based membranes. This review highlights recent advances in free-standing wide band-gap membranes, including GaN, SiC, ZnO, β-Ga2O3, and diamond and their applications. Fabrication techniques of each membrane are presented with material characterization. Some prospects for new research opportunities and challenges are also discussed.

Graphical abstract: Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

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Publication details

The article was received on 19 May 2017, accepted on 12 Jun 2017 and first published on 15 Jun 2017


Article type: Review Article
DOI: 10.1039/C7TC02221B
Citation: J. Mater. Chem. C, 2017,5, 8338-8354
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    Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

    M. Kim, J. Seo, U. Singisetti and Z. Ma, J. Mater. Chem. C, 2017, 5, 8338
    DOI: 10.1039/C7TC02221B

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