Jump to main content
Jump to site search


All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by fully room temperature process

Abstract

In this work, an innovative all-sputtered bottom-gate thin film transistor (TFT) using amorphous InGaZnO (IGZO)/Al2O3 bi-layer channel was fabricated by fully room temperature processes on flexible PEN substrate. A bi-layer channel consist of 10-nm-thick IGZO and 3-nm-thick Al2O3 was obviously observed through the high resolution TEM images. The chemical structure of IGZO depended on different sputtering modes (Pulse-DC/DC/RF) was investigated by XPS measurements. The ultrathin Al2O3 layer upon IGZO showed a significant effect on enhancing mobility, reducing off-state current, and improving gate-bias stability. As a result, the IGZO/Al2O3 bi-layer TFT eventually exhibited a saturation mobility of 18.5 cm2/Vs, an Ion/Ioff radio of 107, an on-state voltage of 1.5 V and a subthreshold swing of 0.27 V/decade, as well as the good stability under NBS/PBS and bending strain. The fabrication of this TFT can be suitably transferred onto the large-size arrays or paper-like substrates, which is in line with the trend of displays development.

Back to tab navigation

Supplementary files

Publication details

The article was received on 11 May 2017, accepted on 16 Jun 2017 and first published on 16 Jun 2017


Article type: Paper
DOI: 10.1039/C7TC02068F
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
  •   Request permissions

    All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by fully room temperature process

    Z. Zheng, Y. Zeng, R. Yao, Z. Fang, H. Zhang, S. Hu, X. Li, H. Ning, J. Peng, W. Xie and X. Lu, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC02068F

Search articles by author

Spotlight

Advertisements