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Formation of arsenene p–n junctions via organic molecular adsorption

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Abstract

Arsenene-based device applications such as transistors and photodetectors benefit from precise control over the carrier type and concentration as well as a combination of both high-quality p-doped and n-doped components to form p–n junctions. Here, it is demonstrated using first-principles calculations that selective organic molecular adsorption allows us to effectively control the carrier type in arsenene. Moreover, upon applying an in-plane tensile strain, the carrier concentration effectively increases. Furthermore, the BN substrate can increase the structural stability without any impact on the doping character of the arsenene sheet. This opens the possibility of creating arsenene p–n junctions.

Graphical abstract: Formation of arsenene p–n junctions via organic molecular adsorption

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Publication details

The article was received on 06 May 2017, accepted on 21 Jun 2017 and first published on 23 Jun 2017


Article type: Paper
DOI: 10.1039/C7TC01972F
Citation: J. Mater. Chem. C, 2017, Advance Article
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    Formation of arsenene p–n junctions via organic molecular adsorption

    N. Gao, Y. F. Zhu and Q. Jiang, J. Mater. Chem. C, 2017, Advance Article , DOI: 10.1039/C7TC01972F

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