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Issue 43, 2017
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Electron spin dynamics in vertical magnetic junctions incorporating two-dimensional layered materials

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Abstract

Graphene and related two dimensional (2D) materials (transition metal dichalcogenides (TMDCs), hexagonal boron nitride) and their hybrid systems have recently been emerged as promising candidates for spintronic applications. Here, we review the spin valve effect in vertical magnetic junctions incorporating semi-metallic graphene, semiconducting TMDCs (MoS2 and WS2), an insulating hexagonal boron nitride (hBN) and various other combinations of these layers. The number of intervening layers, the fabrication process, the quality of the interlayer, the role of different interlayers and their hybrid systems are reviewed for modifying the magnetotransport properties in these magnetic junctions. Also, the spin valve effect in graphene–hBN and graphene–Al2O3 heterostructured devices is particularly discussed to address the polarity of magnetoresistance. To determine whether 2D material-magnetic junctions are ohmic, the current–voltage (IV) characteristics and temperature dependence of the junction resistance are briefly investigated for various junctions.

Graphical abstract: Electron spin dynamics in vertical magnetic junctions incorporating two-dimensional layered materials

  • This article is part of the themed collection: 2D Materials
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Publication details

The article was received on 04 May 2017, accepted on 05 Jun 2017 and first published on 07 Jun 2017


Article type: Review Article
DOI: 10.1039/C7TC01933E
Citation: J. Mater. Chem. C, 2017,5, 11174-11184
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    Electron spin dynamics in vertical magnetic junctions incorporating two-dimensional layered materials

    M. Z. Iqbal and G. Hussain, J. Mater. Chem. C, 2017, 5, 11174
    DOI: 10.1039/C7TC01933E

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