Jump to main content
Jump to site search


Perovskite light-emitting devices with metal-insulator-semiconductor structure and carrier tunnelling

Abstract

Organic–inorganic hybrid perovskites have been widely recognized as highly luminescent materials for efficient light-emitting devices. Herein, we report a simple perovskite-based metal-insulator-semiconductor (MIS) device structure with green light emission. Electron tunnelling and subsequent recombination in the semiconductor-insulator interface region is confirmed as the working mechanism of the perovskite light-emitting device.

Back to tab navigation

Supplementary files

Publication details

The article was received on 26 Apr 2017, accepted on 06 Jul 2017 and first published on 10 Jul 2017


Article type: Communication
DOI: 10.1039/C7TC01809F
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
  •   Request permissions

    Perovskite light-emitting devices with metal-insulator-semiconductor structure and carrier tunnelling

    J. Li, Q. Yu, L. Gan, D. Chen, B. Lu, Z. Ye and H. He, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC01809F

Search articles by author

Spotlight

Advertisements