Jump to main content
Jump to site search

Issue 28, 2017
Previous Article Next Article

Gate tunable photovoltaic effect in a MoSe2 homojunction enabled with different thicknesses

Author affiliations

Abstract

Two-dimensional (2D) material based photovoltaic devices have attracted attention due to their atomically thin profile, strong light–matter interaction and mechanical flexibility. van der Waals heterojunctions, assembled with different 2D materials and a homojunction, are achieved with a doping technique and have been demonstrated to have considerable photovoltaic properties. Here, a more facile approach is proposed to realise an in-plane MoSe2 homojunction with a gate tunable and highly efficient photovoltaic effect. By applying a negative back gate, the device can exhibit a current rectification ratio as high as 105 and a significant Voc of 0.24 V under illumination. The high power conversion efficiency of 1.9% and high photo-responsivity of 550 A W−1 with a fast temporal response of 10 ms indicate that our MoSe2 homojunction based device is a promising candidate in photovoltaic and photodetection applications.

Graphical abstract: Gate tunable photovoltaic effect in a MoSe2 homojunction enabled with different thicknesses

Back to tab navigation

Supplementary files

Publication details

The article was received on 25 Apr 2017, accepted on 29 Jun 2017 and first published on 29 Jun 2017


Article type: Paper
DOI: 10.1039/C7TC01806A
Citation: J. Mater. Chem. C, 2017,5, 7051-7056
  •   Request permissions

    Gate tunable photovoltaic effect in a MoSe2 homojunction enabled with different thicknesses

    Y. Yang, N. Huo and J. Li, J. Mater. Chem. C, 2017, 5, 7051
    DOI: 10.1039/C7TC01806A

Search articles by author

Spotlight

Advertisements