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Issue 31, 2017
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A novel ternary memory property achieved through rational introduction of end-capping naphthalimide acceptors

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Abstract

Small molecule-based multilevel rewritable memory devices have recently gained extensive attention because they possess super-high storage density and can sustain the stored data without power supply and erase and rewrite electrically; however, small molecule-based multilevel flash-type memory device is extremely challenging to achieve. Herein, we designed a symmetric molecule with end-capping naphthalimide acceptors through rational tuning. This molecule showed an improved crystal size and uniform crystal orientation in the film state. The sandwich-structured device exhibited the typical WORM (write-once–read-many times) memory property from OFF to ON1 transition and encouraging flash memory behavior for the ON1/ON2 transition. This is the first report on small molecule-based ternary memory devices with rewritable memory behavior, and this study will inspire the exploration of multilevel data-storage devices with fully rewritable properties in the subsequent researches.

Graphical abstract: A novel ternary memory property achieved through rational introduction of end-capping naphthalimide acceptors

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Publication details

The article was received on 25 Apr 2017, accepted on 13 Jul 2017 and first published on 14 Jul 2017


Article type: Paper
DOI: 10.1039/C7TC01796K
Citation: J. Mater. Chem. C, 2017,5, 7961-7968
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    A novel ternary memory property achieved through rational introduction of end-capping naphthalimide acceptors

    Q. Zhang, J. He, H. Li, N. Li, Q. Xu, D. Chen and J. Lu, J. Mater. Chem. C, 2017, 5, 7961
    DOI: 10.1039/C7TC01796K

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