Jump to main content
Jump to site search

Issue 31, 2017
Previous Article Next Article

A systematic study on effects of precursors and solvents for optimization of solution-processed oxide semiconductor thin-film transistors

Author affiliations

Abstract

Solution-processed oxide semiconductor thin-film transistors (OS TFTs) have attracted much attention as a future display technology, because they have intrinsic properties such as flexibility and transparency as well as fabrication process advantages. Accordingly, to realize solution-processed high performance OS TFTs, various solutions have been developed. However, since it has been focused on the development of the solution itself, there have been no systematic approaches to independently study the effects of precursors and solvents for understanding and optimizing solution-processed OS TFTs. Here, we report a systematic study on the effects of precursors and solvents in solution-processed OS TFTs. Preferentially, InZnxOy (IZO) TFTs fabricated with various specific precursors and solvents are analyzed. It is confirmed that the electrical properties of IZO TFTs including field-effect mobility and Von are strongly affected by the types of precursors and solvents. Through various analyses including the TFT model, and X-ray based analyses, we discover that changes in the electrical properties are related to changes in the physical and intrinsic film properties of IZO films depending on the types of precursors and solvents. With observation of trends in the changes, the effects of precursors and solvents were investigated to better understand and optimize solution-processed OS TFTs.

Graphical abstract: A systematic study on effects of precursors and solvents for optimization of solution-processed oxide semiconductor thin-film transistors

Back to tab navigation

Supplementary files

Publication details

The article was received on 24 Apr 2017, accepted on 27 Jun 2017 and first published on 28 Jun 2017


Article type: Paper
DOI: 10.1039/C7TC01779K
Citation: J. Mater. Chem. C, 2017,5, 7768-7776
  •   Request permissions

    A systematic study on effects of precursors and solvents for optimization of solution-processed oxide semiconductor thin-film transistors

    K. Lim, J. Lee, J. Huh, J. Park, J. Lee, S. Lee and Y. S. Kim, J. Mater. Chem. C, 2017, 5, 7768
    DOI: 10.1039/C7TC01779K

Search articles by author

Spotlight

Advertisements