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Issue 34, 2017
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A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction

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Abstract

A deep-ultraviolet photodetector (DUV PD) which can function independently of an external power supply is urgently desired for the next-generation photodetection applications from the viewpoint of being diminutive, convenient, and power saving. In this work, by introducing a lattice compatible semiconductor Ga:ZnO, a high quality β-Ga2O3/Ga:ZnO heterojunction based DUV PD is achieved using laser molecular beam epitaxy. The obtained device could operate in a self-powered mode with an excellent wavelength selectivity, a high ON/OFF ratio, a high DUV/visible rejection ratio, and a high stability under 254 nm light illumination. The physical mechanism responsible for the observation is discussed based on the photogenerated electron–hole pairs separated in the depletion region under the built-in electric field. Our work may provide a new insight into further high performance self-sufficient DUV PD applications.

Graphical abstract: A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction

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Publication details

The article was received on 21 Apr 2017, accepted on 25 Jun 2017 and first published on 26 Jun 2017


Article type: Communication
DOI: 10.1039/C7TC01741C
Citation: J. Mater. Chem. C, 2017,5, 8688-8693
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    A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction

    Z. Wu, L. Jiao, X. Wang, D. Guo, W. Li, L. Li, F. Huang and W. Tang, J. Mater. Chem. C, 2017, 5, 8688
    DOI: 10.1039/C7TC01741C

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