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Issue 32, 2017
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MoS2 field-effect transistor with graphene contacts

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Abstract

Tailoring the electronic properties of molybdenum disulfide (MoS2) is essential to obtain the best performance of its electronic and optoelectronic devices. Here, we report a simple methodology to improve the performance of bi-layer (BL) MoS2 field-effect transistors (FETs) by a combination of nitrogen (N2) gas and deep-ultraviolet (DUV) light treatment. Threshold voltages of BL MoS2 FETs shifted towards a negative gate voltage after treatment with N2 gas in the presence of DUV light. The charge-carrier mobility of BL MoS2 was improved significantly after exposure to N2 gas under DUV light irradiation. The carrier density of BL MoS2 was enhanced after treatment with N2 gas in the presence of DUV light. We believe that our work may also help improve the performance of other two-dimensional nanomaterials.

Graphical abstract: MoS2 field-effect transistor with graphene contacts

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Publication details

The article was received on 20 Apr 2017, accepted on 23 Jul 2017 and first published on 24 Jul 2017


Article type: Paper
DOI: 10.1039/C7TC01736G
Citation: J. Mater. Chem. C, 2017,5, 8308-8314
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    MoS2 field-effect transistor with graphene contacts

    S. Andleeb, J. Eom, N. Rauf Naz and A. K. Singh, J. Mater. Chem. C, 2017, 5, 8308
    DOI: 10.1039/C7TC01736G

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