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Highly Responsive Phototransistors based on the 2,6-bis(4-methoxyphenyl)anthracene Single crystal

Abstract

Phototransistors based on the 2,6-bis(4-methoxyphenyl)anthracene (BOPAnt), both with thin film and single crystal are systematically studied in this report. High quality BOPAnt single crystals are grown by PVT (physical vapor transport) method to fabricate the bottom gate top contact phototransistor. The thin film phototransistors show photo responsivity of 9.75 AW-1 under 1 mW/cm2 blue LED illumination, while under the same conditions a photo responsivity of 414 AW-1 is displayed by single crystal based phototransistors. Furthermore, using a small power monochromatic light of wavelength 350 nm, photo responsivity of 3100 AW-1 under 0.11 mW/cm2, and EQE of 9.5×105 % are obtained for the BOPAnt single crystal phototransistor with the channel length of 65 μm. The much higher photo responsivity of the single crystal based phototransistors is due to much higher exciton diffusion length as compared to the thin film devices, which is also evident by the large Von shift towards positive voltage direction. Photo switching behaviors of the single crystal based phototransistors are also studied. It is observed that after a short warming up period, the single crystal based phototransistors show stable switching behavior.

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Publication details

The article was received on 11 Apr 2017, accepted on 09 May 2017 and first published on 12 May 2017


Article type: Communication
DOI: 10.1039/C7TC01563A
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
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    Highly Responsive Phototransistors based on the 2,6-bis(4-methoxyphenyl)anthracene Single crystal

    A. Li, L. Yan, M. Liu, I. Murtaza, C. He, D. Zhang, Y. He and H. Meng, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC01563A

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