Ultrahigh, ultrafast and large response size visible-near-infrared optical position sensitive detector based on CIGS structure
CIGS-based heterostructures have been demonstrated to achieve superior high absorption and photovoltaic effects theoretically and experimentally, making them extremely attractive for realizing optoelectronic devices. However, the applications of CIGS are mainly focused on solar cells. In this work, lateral photovoltaic effect (LPE) is firstly observed in CIGS film with Glass/Mo/CIGS/CdS/ZnO/ITO structure, indicating its great potential application in position sensitive detectors (PSDs). LPE measurements reveal that this structure PSD exhibits ultrahigh sensitivity and excellent linearity even to very large working distance of 28 mm in visible-near-infrared range with the position sensitivity up to 431.6 mV/mm. Notably, the detector shows ultrafast response speed with rise time of 8.3 μs and fall time of 7.7 μs, and capability to work stably under air conditions for a very long time. The unprecedented performance could be attributed to a good quality of this CIGS structure, as well as the unique optical property of CIGS layer and excellent conductivity of ITO layer. These findings suggest that the Glass/Mo/CIGS/CdS/ZnO/ITO structure has great potential application in the field of visible-near-infrared optical position sensitive detection and might be used as elements for construction of high-speed integrated optoelectronic sensor circuitry.