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One-step fabrication of CdS:Mo–CdMoO4 core–shell nanoribbons for nonvolatile memory devices with high resistance switching

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Abstract

Nano-field-effect transistor (nano-FET)-based nonvolatile memory (NVM) devices fabricated from one-dimensional (1D) nanostructures have attracted much attention due to their superior memory performance. However, the construction of NVM devices is relatively complex due to the multi-step process needed to fabricate the trapping/tunneling layers. Here, we report a one-step fabrication of CdS:Mo–CdMoO4 core–shell nanoribbons (NRs) for high-performance nano-FET-based NVM devices. The CdMoO4 shell could serve as both the charge storage media and tunneling layer, thus greatly facilitating the device construction. The resultant NVM devices exhibited a large memory window of 60 V as well as a long retention time of 3600 s. Significantly, the devices showed an excellent resistance switching behavior with a current ON/OFF ratio as high as 106, which is larger than those of most 1D nanostructure-based nano-FET memories. A mechanism associated with defect states caused by oxygen vacancies in the CdMoO4 shell was proposed to interpret the memory characteristics. Given the excellent memory performance, along with the simple one-step fabrication process, CdS:Mo–CdMoO4 NR-based NVM devices will have important applications in new-generation high-performance NVM devices.

Graphical abstract: One-step fabrication of CdS:Mo–CdMoO4 core–shell nanoribbons for nonvolatile memory devices with high resistance switching

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Publication details

The article was received on 23 Mar 2017, accepted on 16 May 2017 and first published on 16 May 2017


Article type: Paper
DOI: 10.1039/C7TC01230F
Citation: J. Mater. Chem. C, 2017, Advance Article
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    One-step fabrication of CdS:Mo–CdMoO4 core–shell nanoribbons for nonvolatile memory devices with high resistance switching

    N. Zheng, Z. Shao, F. Xia, T. Jiang, X. Wu, X. Zhang, J. Jie and X. Zhang, J. Mater. Chem. C, 2017, Advance Article , DOI: 10.1039/C7TC01230F

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