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Tunable defect engineering on TiON thin films by multi-step sputtering processes: From Schottky diode to resistive switching memory

Abstract

Role of defect engineering is essential in the resistive switching memory. In this study, the multi-step sputtering processes to fabricate TiON for resistive random access memory (ReRAM) device were demonstrated and detailed mechanisms were systematically investigated. The multi-step sputtering TiON film shows asymmetric defect distribution, exhibiting a rectifying characteristic as a Schottky diode and a resistive switching behavior as memory, depending on applied biases. The rectifying properties including a rectifying ratio of 102 at ±1.5 V, a forward current of ∼2 mA at 1.5 V, a turn-on voltage of 1.5 V and an ideality factor of 4.5 were measured. In addition, comparing to TiON ReRAM device prepared by the single-step sputtering process, the TiON film with the gradient distribution of defects exhibits a stable switching behavior with a better uniform SET voltage (VSET) and a coefficient of variation (σ/μ) improved from 0.49 to 0.17. The conduction mechanisms of two kinds of the device were investigated by a trap-controlled space charge limit conduction (SCLC) process. The mechanisms of how the distribution of asymmetric defects affecting resistive switching behavior were discussed in detail. The results disclosure the possibility of the modulation of defect engineering toward a Schottky diode application, leading to improvement of ReRAM performance for a diode-a resistor (1D1R) applications in the future.

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Publication details

The article was received on 16 Mar 2017, accepted on 04 May 2017 and first published on 04 May 2017


Article type: Paper
DOI: 10.1039/C7TC01130J
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
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    Tunable defect engineering on TiON thin films by multi-step sputtering processes: From Schottky diode to resistive switching memory

    T. Su, C. Huang, Y. Shih, T. Wang, H. Medina, J. Huang, H. Tsai and Y. Chueh, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC01130J

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