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Resistive switching phenomena induced by the heterostructure composite of ZnSnO3 nanocubes interspersed ZnO nanowires

Abstract

Various materials have been reported to investigate the resistive switching effect in them owing to the promising advantages of high scalability, low cost, simple structure and less power consumption of such memory devices. In this study, resistive switching effect in the nanocomposite of zinc oxide nanowires (ZnO NWs) and zinc stannate nanocubes (ZnSnO3 NCs) has been explored. Device has been fabricated on a flexible substrate (PET) on which highly conductive (0.3 Ω-cm) patterns of silver (Ag) were deposited as bottom electrodes by reverse offset printing technique. Vertically aligned and highly dense ZnO NWs were grown on Ag patterns by hydrothermal synthesis followed by spraying ZnSnO3 NCs through electrohydrodynamic atomization (EHDA) technique. Finally, the top Ag electrode was patterned through EHD pattering technique to complete the device fabrication. The fabricated device exhibited characteristics of bipolar, rewritable, and nonvolatile resistive switching memory with off/on ratio of 5.8 × 102 and retention time of 104 s at a small operating voltage (1.2 V). The obtained electrical results of Ag-ZnO/ZnSnO3-Ag memory device were remarkable with appreciable repeatability. The significantly stable, highly durable and promising results of ZnO NWs-ZnSnO3 NCs heterostructure makes this semiconductive nanocomposite a potential candidate for future flexible memory devices.

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Publication details

The article was received on 15 Mar 2017, accepted on 13 May 2017 and first published on 15 May 2017


Article type: Paper
DOI: 10.1039/C7TC01105A
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
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    Resistive switching phenomena induced by the heterostructure composite of ZnSnO3 nanocubes interspersed ZnO nanowires

    G. U. Siddiqui, M. M. Rehman and K. H. Choi, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC01105A

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