Issue 21, 2017

Improving the electrical performance of solution processed oligothiophene thin-film transistors via structural similarity blending

Abstract

Here we show that the blending of structurally similar oligothiophene molecules is an effective approach to improve the field-effect mobility and Ion/Ioff as compared to single component based transistors. The effect of addition of each component is studied extensively using a wide array of methods such as X-ray diffraction, ToF-SIMS, and ambient UPS correlated with the electrical characterization.

Graphical abstract: Improving the electrical performance of solution processed oligothiophene thin-film transistors via structural similarity blending

Supplementary files

Article information

Article type
Communication
Submitted
17 Feb 2017
Accepted
27 Apr 2017
First published
28 Apr 2017

J. Mater. Chem. C, 2017,5, 5048-5054

Improving the electrical performance of solution processed oligothiophene thin-film transistors via structural similarity blending

T. Leydecker, L. Favaretto, D. T. Duong, G. Zappalà, K. Börjesson, A. Licciardello, A. Salleo, M. Melucci, E. Orgiu and P. Samorì, J. Mater. Chem. C, 2017, 5, 5048 DOI: 10.1039/C7TC00748E

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements