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Sp2-clustering induced improvement of resistive switching uniformity in Cu/amorphous carbon/Pt electrochemical metallization memory

Abstract

We studied the influence of sp2 clustering on switching uniformity in amorphous carbon (a-C) based electrochemical metallization memory devices. Herein, a simple method was utilized to adjust the degree of sp2 clustering by changing compliance currents (CCs). The small sp2 clusters within the a-C layer were found to condense into larger clusters with increasing CCs because of the CC-dependent joule heating effect. The Raman spectrum experimentally verified the increase of sp2 clusters diameter with increasing CCs. Importantly, the switching uniformity improvement can be obtained with rising the degree of sp2 clustering. The enhanced local electric-field around sp2 clusters can account for the reduction of the conductive filament randomness and corresponding improvement of memory performance.

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Publication details

The article was received on 15 Feb 2017, accepted on 11 May 2017 and first published on 12 May 2017


Article type: Paper
DOI: 10.1039/C7TC00712D
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
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    Sp2-clustering induced improvement of resistive switching uniformity in Cu/amorphous carbon/Pt electrochemical metallization memory

    X. Zhao, H. Xu, Z. wang, Z. Xu, C. Zhang, G. Wang, W. Liu, J. Ma and Y. Liu, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC00712D

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