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Journal of Materials Chemistry C

Materials for optical, magnetic and electronic devices

Paper

Charge carrier concentration dependence of ultrafast plasmonic relaxation in conducting metal oxide nanocrystals

*
Corresponding authors
a
Department of Chemistry, University of California, Berkeley, Berkeley, USA
b
McKetta Department of Chemical Engineering, The University of Texas at Austin, 200 East Dean Keeton Street, Austin, USA
c
Department of Chemistry, The University of Texas at Austin, Austin, USA
E-mail: roberts@cm.utexas.edu
d
Department of Materials Science and Engineering, The University of California, Berkeley, Berkeley, USA
J. Mater. Chem. C, 2017, Advance Article

DOI: 10.1039/C7TC00600D
Received 07 Feb 2017, Accepted 09 Mar 2017
First published online 10 Mar 2017

This article is part of themed collection: Journal of Materials Chemistry C Emerging Investigators 2017
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