Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance upgrade on Thursday 4th of May 2017 from 8.00am to 9.00am (BST).

During this time our websites will be offline temporarily. If you have any questions please use the feedback button on this page. We apologise for any inconvenience this might cause and thank you for your patience.

Vapor-phase synthesis of sub-15 nm hybrid gate dielectrics for organic thin film transistors

Author affiliations


Organic thin film transistors (OTFTs) have been extensively investigated for next-generation electronic devices. However, many of them still suffer from poor device performances, which limits their real-world applications. The use of high-k oxides such as Al2O3 via atomic layer deposition (ALD) can mitigate this issue by increasing the capacitance of the dielectric layer (Ci). However, the abundant –OH functionality at the surface of oxides, and the ionic polarization between the carrier and high-k ionic lattice cause severe hysteresis, drop of mobility, and shift of threshold voltage in OTFTs. Low mechanical flexibility of the layers is also problematic, which hinders the broad use of ALD layers for flexible electronics. To address this issue, we synthesized an ultrathin (<15 nm) and mechanically flexible high-k oxide/non-polar polymer hybrid layer by integrating the ALD and initiated chemical vapor deposition (iCVD) processes into one chamber. The non-polar polymer via iCVD efficiently passivated the polar surface of the Al2O3 layer even with the thickness lower than 4 nm, which was hard to achieve with the conventional solution-based processes. Through the systematic variation of the polymer thickness, it turned out that the hybrid dielectric layer exhibited substantial improvement of overall device performances and long term operation stability against the continuous voltage stress (CVS) for 3000 s. The resulting 15 nm-thick hybrid layer even withstood a tensile strain up to 3.3%, which is far superior to the mechanical flexibility of the Al2O3 layer. Both the hybrid dielectric layer and the new vacuum process are expected to be highly beneficial for realizing high-performance transistors with mechanical flexibility.

Graphical abstract: Vapor-phase synthesis of sub-15 nm hybrid gate dielectrics for organic thin film transistors

Back to tab navigation
Please wait while Download options loads

Supplementary files

Publication details

The article was received on 31 Jan 2017, accepted on 30 Mar 2017 and first published on 30 Mar 2017

Article type: Paper
DOI: 10.1039/C7TC00501F
Citation: J. Mater. Chem. C, 2017, Advance Article
  •   Request permissions

    Vapor-phase synthesis of sub-15 nm hybrid gate dielectrics for organic thin film transistors

    H. Seong, J. Choi, B. J. Kim, H. Park and S. G. Im, J. Mater. Chem. C, 2017, Advance Article , DOI: 10.1039/C7TC00501F

Search articles by author