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Growth and properties of large-area sulfur-doped graphene films

Abstract

Heteroatom doping can effectively tune the structure and property of graphene. Theoretical calculation indicates that sulfur doing can effectively modify the band structure and further modulate the carrier transport property. However, it is still a big challenge to synthesize large-area sulfur-doped graphene (SG) film with high sulfur doping concentration and reasonable electrical properties, since sulfur has much larger atomic radius than that of carbon. In this study, the sole solid organic source thianthrene (C12H8S2), has been employed as both carbon source and sulfur dopant, to grow large-area few-layered SG film by chemical vapor deposition (CVD). The results show that the doping concentration, doping configuration and electrical properties can be effectively tuned by hydrogen flux: the sulfur doping concentration can be as high as 4.01 at%; the maximal mobility of SG can reach 270 cm2/Vs, the highest than ever reported for sulfur-doped graphene.

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Publication details

The article was received on 26 Jan 2017, accepted on 10 Jul 2017 and first published on 10 Jul 2017


Article type: Paper
DOI: 10.1039/C7TC00447H
Citation: J. Mater. Chem. C, 2017, Accepted Manuscript
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    Growth and properties of large-area sulfur-doped graphene films

    Y. Chen, J. Zhou, Z. Wang, J. Liu, B. Zheng, W. Zhang and Y. Li, J. Mater. Chem. C, 2017, Accepted Manuscript , DOI: 10.1039/C7TC00447H

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