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Journal of Materials Chemistry C

Materials for optical, magnetic and electronic devices

Paper

Enhanced near-UV electroluminescence from p-GaN/i-Al2O3/n-ZnO heterojunction LEDs by optimizing the insulator thickness and introducing surface plasmons of Ag nanowires

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Corresponding authors
a
Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, Changchun 130024, China
E-mail: wzliu@nenu.edu.cn, hyxu@nenu.edu.cn
J. Mater. Chem. C, 2017, Advance Article

DOI: 10.1039/C7TC00419B
Received 25 Jan 2017, Accepted 02 Mar 2017
First published online 02 Mar 2017
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