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Lead monoxide: a two-dimensional ferromagnetic semiconductor induced by hole-doping

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Abstract

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

Graphical abstract: Lead monoxide: a two-dimensional ferromagnetic semiconductor induced by hole-doping

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Publication details

The article was received on 18 Jan 2017, accepted on 11 Apr 2017 and first published on 12 Apr 2017


Article type: Paper
DOI: 10.1039/C7TC00299H
Citation: J. Mater. Chem. C, 2017, Advance Article
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    Lead monoxide: a two-dimensional ferromagnetic semiconductor induced by hole-doping

    Y. Wang, Q. Zhang, Q. Shen, Y. Cheng, U. Schwingenschlögl and W. Huang, J. Mater. Chem. C, 2017, Advance Article , DOI: 10.1039/C7TC00299H

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