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Journal of Materials Chemistry C

Materials for optical, magnetic and electronic devices


Electron compensation in p-type 3DOM NiO by Sn doping for enhanced formaldehyde sensing performance

Zhihua Wang,a   Heng Zhou,a   Dongmei Hana and   Fubo Gu*a  
Corresponding authors
State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China
E-mail: gufb@mail.buct.edu.cn
J. Mater. Chem. C, 2017, Advance Article

DOI: 10.1039/C7TC00226B
Received 14 Jan 2017, Accepted 01 Mar 2017
First published online 01 Mar 2017
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