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Journal of Materials Chemistry C

Materials for optical, magnetic and electronic devices


Structure and luminescence properties of a Nd3+ doped Bi4Ge3O12 scintillation crystal: new insights from a comprehensive study

Corresponding authors
Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
E-mail: scu_kuang@163.com
Department of Physics, Nanyang Normal University, Nanyang 473061, China
E-mail: lucheng@calypso.cn
Department of Science and Environmental Studies, The Hong Kong Institute of Education, 10 Lo Ping Road, Tai Po, Hong Kong, China
E-mail: yyyeung@ied.edu.hk
Department of Physics, Florida A&M University, Tallahassee, USA
Department of Physics and High Pressure Science and Engineering Center, University of Nevada, Las Vegas, USA
J. Mater. Chem. C, 2017,5, 3079-3087

DOI: 10.1039/C6TC05657A
Received 30 Dec 2016, Accepted 23 Feb 2017
First published online 23 Feb 2017
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