Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires

Abstract

One dimensional (1D) zinc oxide (ZnO) nano and microwires have been considered as one of the most promising candidates for the fabrication of novel nano and microscale electronic and optoelectronic devices. In this study, individual Ga heavily doped ZnO microwires (GZO MWs) were successfully synthesized via chemical vapor deposition methods. Bright, stable, and near-infrared light-emission from electrically biased individual GZO MWs has been achieved. Mysteriously, alternating current driven near-infrared electroluminescence (EL) devices based on individual GZO MWs can also be realized. Therefore, individual GZO MWs that can be analogous to incandescent sources, provide promising potential applications in future ultracompact near-infrared electronic and optoelectronic devices or systems.